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2SC5022 - Silicon NPN Transistor

Key Features

  • High breakdown voltage V (BR)CEO = 1500 V Min Outline TO-220FM 12 3 1. Base 2. Collector 3. Emitter Free Datasheet http://www. datasheet4u. com/ 2SC5022 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC I C (peak) PC Tj Tstg Ratings 1500 1500 6 20 40 2 150.
  • 55 to +150 Unit.

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Datasheet Details

Part number 2SC5022
Manufacturer Renesas
File Size 166.66 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC5022 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.