Datasheet4U Logo Datasheet4U.com

2SC5132A - Silicon NPN Triple Diffused Planar Transistor

Features

  • High breakdown voltage VCES = 1500 V, IC = 8 A.
  • Built.
  • in damper diode type.
  • Isolated package TO-3P.
  • FM B C 1 E 2 3 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com 2SC5132A Silicon NPN Triple Diffused Planar Application Character display horizontal deflection output TO–3PFM (N) Features • High breakdown voltage VCES = 1500 V, IC = 8 A • Built–in damper diode type • Isolated package TO-3P•FM B C 1 E 2 3 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item ——————————————————————————————————————————— Collector to emitter voltage Emitter to base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature Diode current Note: 1. Value at Tc = 25°C VCES VEBO IC ic(surge) PC*1 Tj Tstg ID 1500 6 8 16 50 150 –55 to +150 6 V V A A W °C °C A www.DataSheet4U.
Published: |