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Hitachi Power Semiconductor Device Electronic Components Datasheet

2SD1126K Datasheet

NPN TRANSISTOR

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2SD1126(K)
Silicon NPN Triple Diffused
Application
Power switching
Outline
TO-220AB
1
23
1. Base
2. Collector
(Flange)
3. Emitter
2
1
1.5 k
(Typ)
130
(Typ)
3
ID


Hitachi Power Semiconductor Device Electronic Components Datasheet

2SD1126K Datasheet

NPN TRANSISTOR

No Preview Available !

2SD1126(K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
C to E diode forward current
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC * 1
Tj
Tstg
ID
Ratings
120
120
7
10
15
50
150
–55 to +150
10
Unit
V
V
V
A
A
W
°C
°C
A
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to emitter breakdown V(BR)CEO
voltage
120
Emitter to base breakdown
voltage
V(BR)EBO
7
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
C to E diode forward voltage
Turn on time
Turn off time
Note: 1. Pulse test.
I CBO
I CEO
hFE
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
VD
t on
t off
1000
Typ
0.8
8.0
Max Unit
—V
—V
100
10
2000
1.5
3.0
2.0
3.5
3.0
µA
µA
V
V
V
V
V
µs
µs
Test conditions
IC = 25 mA, RBE =
IE = 200 mA, IC = 0
VCB = 120 V, IE = 0
VCE = 100 V, RBE =
VCE = 3 V, IC = 5 A*1
IC = 5 A, IB = 10 mA*1
IC = 10 A, IB = 0.1 A*1
IC = 5 A, IB = 10 mA*1
IC = 10 A, IB = 0.1 A*1
ID = 10 A*1
IC = 5 A, IB1 = –IB2 = 10 mA
2


Part Number 2SD1126K
Description NPN TRANSISTOR
Maker Hitachi Semiconductor
Total Page 6 Pages
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