• Part: 2SK2212
  • Description: Silicon N-Channel MOS FET
  • Manufacturer: Hitachi Semiconductor
  • Size: 48.33 KB
Download 2SK2212 Datasheet PDF
Hitachi Semiconductor
2SK2212
Features - - - - - Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter, Moter Control Outline TO-220FM 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings 200 ±20 10 40 10 30 150 - 55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 200 ±20 - - 2.0 - 3.5 - - - - - - - - - Typ - - - - - 0.24 6 1000 360 65 18 80 65 50 1.1 190 Max - - ±10 250 4.0 0.3 - - - - - - - - - - Unit V V µA µA V Ω S p F p F p F...