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Hitachi Power Semiconductor Device Electronic Components Datasheet

2SK2212 Datasheet

Silicon N-Channel MOS FET

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2SK2212
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No Secondary Breakdown
Suitable for Switching regulator, DC-DC converter, Moter Control
Outline
TO-220FM
D 12 3
1. Gate
G 2. Drain
3. Source
S


Hitachi Power Semiconductor Device Electronic Components Datasheet

2SK2212 Datasheet

Silicon N-Channel MOS FET

No Preview Available !

2SK2212
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW 10 µs, duty cycle 1 %
2. Value at Tc = 25 °C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
200
±20
10
40
10
30
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2


Part Number 2SK2212
Description Silicon N-Channel MOS FET
Maker Hitachi Semiconductor
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2SK2212 Datasheet PDF






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