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Hitachi Power Semiconductor Device Electronic Components Datasheet

2SK2212 Datasheet

Silicon N-Channel MOS FET

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2SK2212
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No Secondary Breakdown
• Suitable for Switching regulator, DC-DC converter, Moter Control
Outline
TO-220FM
D 12 3
1. Gate
G 2. Drain
3. Source
S


Hitachi Power Semiconductor Device Electronic Components Datasheet

2SK2212 Datasheet

Silicon N-Channel MOS FET

No Preview Available !

2SK2212
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
200
±20
10
40
10
30
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2


Part Number 2SK2212
Description Silicon N-Channel MOS FET
Maker Hitachi Semiconductor
PDF Download

2SK2212 Datasheet PDF






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