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2SK2216 Datasheet Silicon N-channel Mos Fet

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SK2216 Silicon N-Channel MOS FET ADE-208-346A 2nd. Edition Application UHF power.

Key Features

  • High power output, high gain, high efficiency PG = 9.7 dB, Pout = 140 W, ηD = 55% typ (f = 860 MHz).
  • Compact package Suitable for push - pull circuit Outline 2SK2216 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VDSS VGSS ID Pch.
  • Tch Tstg 1 Ratings 60 ±10 20 150 150.
  • 55 to +150 Unit V V A W °C °C Electrical Cha.

2SK2216 Distributor

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