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2SK2221 - Silicon N-Channel MOSFET

Key Features

  • High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Outline TO-3P D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S 2SK2220, 2SK2221 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK2220 2SK2221 Gate to source voltage Drain current Body to drain diode reverse drain current Ch.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK2220 Silicon N-Channel MOSFET
2SK2225 Silicon N-Channel MOSFET
2SK2202 Silicon N-Channel MOS FET
2SK2203 Silicon N-Channel MOS FET
2SK2212 Silicon N-Channel MOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK2220, 2SK2221 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • • • • • • • High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Outline TO-3P D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S 2SK2220, 2SK2221 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK2220 2SK2221 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note 1.