| Part Number | 2SK2221 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
2SK2221
·FEATURES ·Drain Current ID= 8A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.3Ω(Ma.
*Drain Current ID= 8A@ TC=25℃ *Drain Source Voltage- : VDSS= 200V(Min) *Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) *Fast Switching *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *High efficiency switch mode power. |
2SK2221 Datasheet and Specifications PDF
The 2SK2221 is a N-Channel MOSFET.
| Part Number | 2SK2221 Datasheet |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SK2220, 2SK2221
Silicon N-Channel MOS FET
Application
Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352
Features
• • • • • • • High power gain Excellent frequency response High s.
* * * * * * * High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Outline TO-3P D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S 2SK2220, 2SK2221 Absolute Maximum Ra. |
| Part Number | 2SK2221 Datasheet |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Manufacturer | Renesas |
| Overview |
2SK2220, 2SK2221
Silicon N Channel MOS FET
Application
Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352
Features
• High power gain • Excellent frequency response • High speed switc.
* High power gain * Excellent frequency response * High speed switching * Wide area of safe operation * Enhancement-mode * Good complementary characteristics * Equipped with gate protection diodes Outline REJ03G1004-0200 (Previous: ADE-208-1352) Rev.2.00 Sep 07, 2005 RENESAS Package code: PRSS0004. |