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K2221 - 2SK2221

Key Features

  • High power gain.
  • Excellent frequency response.
  • High speed switching.
  • Wide area of safe operation.
  • Enhancement-mode.
  • Good complementary characteristics.
  • Equipped with gate protection diodes Outline TO-3P D G1 2 3 1. Gate 2. Source (Flange) S 3. Drain 2SK2220, 2SK2221 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK2220 2SK2221 Gate to source voltage Drain current Body to drain diode reverse drain current.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
K2220 2SK2220
K2225 2SK2225
K2247 2SK2247

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK2220, 2SK2221 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Outline TO-3P D G1 2 3 1. Gate 2. Source (Flange) S 3. Drain 2SK2220, 2SK2221 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK2220 2SK2221 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note 1.