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K2220 - 2SK2220

Download the K2220 datasheet PDF. This datasheet also covers the K2221 variant, as both devices belong to the same 2sk2220 family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High power gain.
  • Excellent frequency response.
  • High speed switching.
  • Wide area of safe operation.
  • Enhancement-mode.
  • Good complementary characteristics.
  • Equipped with gate protection diodes Outline TO-3P D G1 2 3 1. Gate 2. Source (Flange) S 3. Drain 2SK2220, 2SK2221 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK2220 2SK2221 Gate to source voltage Drain current Body to drain diode reverse drain current.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K2221-HitachiSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
K2220 Silicon N Channel MOS FET Renesas
K222 2SK222 Sanyo Semicon Device
K2221 Silicon N-Channel MOSFET Renesas
K2222 N-Channel Transistor ETC
K2225 High Speed Power Switching MOSFET Renesas

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
K2221 2SK2221
K2225 2SK2225
K2247 2SK2247

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK2220, 2SK2221 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Outline TO-3P D G1 2 3 1. Gate 2. Source (Flange) S 3. Drain 2SK2220, 2SK2221 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK2220 2SK2221 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note 1.