2SK2225 Datasheet | Hitachi Semiconductor

Features - - - - - High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter Outline TO-3PFM 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings 1500 ±20 2 7 2 50 150 - 55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Symbol V(BR)DSS I GSS Min 1500 - - 2.0 - 0.45 - - - - - - - - - Typ - - - - 9 0.75 990 125 60 17 50 150 50 0.9 1750 Max - ±1 500 4.0 12 - - - - - - - - - - Unit V µA µA V Ω S p F p F p F ns ns ns ns V ns I F = 2 A, VGS = 0 I F = 20 A, VGS = 0, di F / dt = 100 A / µs Test conditions I D = 10 m A, VGS = 0 VGS = ±20 V, VDS = 0 VDS =1200 V, VGS = 0 I D = 1 m A, VDS = 10 V ID = 1 A VGS = 15 V- 1 ID = 1 A VDS = 20 V- 1 VDS = 10 V VGS = 0 f = 1 MHz ID = 1 A VGS = 10 V RL = 30 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr Power vs. Temperature Derating 80 Pch (W) I D (A) 10 3 1 0.3 0.1 0.03 Ta = 25 °C 0 50 100 Case Temperature 150 Tc (°C) 200 0.01 10 30 100 300 1000 3000 10000 Drain to Source Voltage V DS (V) Maximum Safe Operation Area 10 µs 0 10 PW = 10 m...