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2SK2203 Datasheet Silicon N-channel Mos Fet

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SK2203 Silicon N-Channel MOS FET ADE-208-139 1st. Edition Application High speed power.

Key Features

  • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2203 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation.

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