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Hitachi Power Semiconductor Device Electronic Components Datasheet

2SK2796 Datasheet

Silicon N Channel MOS FET

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2SK2796(L), 2SK2796(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 0.12typ.
4V gate drive devices.
High speed switching
Outline
DPAK |1
D
G
S
ADE-208-534C (Z)
4th. Edition
Jun 1998
44
12 3
12 3
1. Gate
2. Drain
3. Source
4. Drain


Hitachi Power Semiconductor Device Electronic Components Datasheet

2SK2796 Datasheet

Silicon N Channel MOS FET

No Preview Available !

2SK2796(L), 2SK2796(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
I Note1
D(pulse)
I DR
I Note3
AP
E Note3
AR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note:
1. PW 10µs, duty cycle 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Ratings
60
±20
5
20
5
5
2.14
20
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
2


Part Number 2SK2796
Description Silicon N Channel MOS FET
Maker Hitachi Semiconductor
PDF Download

2SK2796 Datasheet PDF






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