FEATURES
Low on-resistance RDS = 0.12 typ. High speed switching +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 3.80 +0.25 2.65 -0.1 +0.15 0.50 -0.15 +0.28 1.50 -0.1 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 1 Gate 2 Drain 3 Source ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Symbol Rating Unit VDSS 60 V VGSS 20 V ID 5 A Idp * 20 A PD 20 W Tch 150 Tstg -55 to +150 ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Drain source breakdown voltage Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol Testconditons VDSS ID=10mA,VGS=0V IDSS VDS=60V,VGS=0 IGS...