Renesas Electronics 2SK2796S
Silicon N-Channel MOSFET
| Part No. | 2SK2796S |
|---|---|
| Datasheet | 2SK2796S Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance RDS(on) = 0.12 Ω typ.● 4 V gate drive devices.
● High speed switching Outline REJ03G1034-0500 (Previous: ADE-208-534C) Rev.5.00 Sep 07, 2005 RENESAS Package code: PRSS0004ZD-A (Package name: DPAK(L)-(1)) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S)) 4 D G 12 3 1 23 S 1. Gate 2. Drain 3. Source 4. Drain Rev.5.00 Sep 07, 2005 page 1 of 8 2SK2796(L), 2SK2796(S)
ABSOLUTE MAXIMUM RATINGS
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Ratings 60 ±20 5 20 5 5 2.14 20 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C °CELECTRICAL CHARACTERISTICS
Item Symbol Min Drain to source breakdown voltage V(BR)DSS 60...
