Hitachi 2SK2796S
Silicon N-Channel MOSFET
| Part No. | 2SK2796S |
|---|---|
| Datasheet | 2SK2796S Download |
| Manufacturer |  Hitachi |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance R DS(on) = 0.12Ω typ.● 4V gate drive devices.
● High speed switching Outline DPAK |1 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2796(L), 2SK2796(S)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 5 20 5 5 2.14 20 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω 2 2SK2796(L), 2SK2796(S)ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min 60 ±20 — — 1.0 — — 2.5 — — — — — — — — — Typ — — — — — 0.12 0.16 4.0 180 90 30 9 25 35 55 1.0 40 Max — — 10 ±10 2.0 0.16 0.25 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 5A, VGS = 0 I F...
