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2SK3207 - N-Channel MOSFET

Datasheet Summary

Features

  • Low on-resistance R DS = 70 mΩ typ.
  • High speed switching.
  • 4V gate drive device can be driven from 5V source Outline TO.
  • 220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SK3207 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D.

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Datasheet Details

Part number 2SK3207
Manufacturer Hitachi Semiconductor
File Size 27.23 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK3207 Datasheet
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2SK3207 Silicon N Channel MOS FET High Speed Power Switching ADE-208-758A(Z) Target Specification 2nd. Edition Feb 1999 Features • Low on-resistance R DS = 70 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SK3207 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings 150 ±20 18 72 18 18 24 35 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR* Pch* Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3.
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