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2SK3209 - N-Channel MOSFET

Key Features

  • Low on-resistance R DS =35mΩ typ.
  • High speed switching.
  • 4V gate drive device can be driven from 5V source Outline TO.
  • 220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SK3209 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(p.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK320 (2SK319 / 2SK320) SILICON N-CHANNEL MOS FET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK3209 Silicon N Channel MOS FET High Speed Power Switching ADE-208-759(Z) Target Specification 1st. Edition December 1998 Features • Low on-resistance R DS =35mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SK3209 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 150 ±20 25 100 25 25 46 35 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3.