2SK3209 Description
2SK3209 Silicon N Channel MOS FET High Speed Power Switching ADE-208-759(Z) Target Specification 1st.
2SK3209 Key Features
- Low on-resistance R DS =35mΩ typ
- High speed switching
- 4V gate drive device can be driven from 5V source
- Part: 2SK3209
- Manufacturer: Hitachi Semiconductor
- Size: 26.42 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Renesas |
2SK3209 | Silicon N-Channel MOSFET |