Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
- π- MOSV)
Switching Regulator Applications DC- DC Converter, and Motor Drive Applications l 4 V gate drive l Low drain- source ON resistance l High forward transfer admittance l Low leakage current l Enhancement- mode : RDS (ON) = 0.36 Ω (typ.) : |Yfs| = 4.5 S (typ.) Unit: mm
: IDSS = 100 µA (max) (VDS = 150 V) : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics Drain- source voltage Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 150 150 ±20 5 20 20 71 5 2 150
- 55~150 Unit V V V A W mJ A...