2SK3207 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS = 70 mΩ typ. - High speed switching - 4V gate drive device can be driven from 5V source Outline TO- 220FM 1 2 S 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse)- I DR I AP - 3 3 2 1 Ratings 150 ±20 18 72 18 18 24 35 150 - 55 to +150 Unit V V A A A A m J W °C °C EAR- Pch- Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min 150 ±20 - - 1.0 - - 11 - - - - - - - - - Typ - - - - - 70 85 18 1100 350 170 15 110 270 130 0.9 150 Max - - ±10 10 2.5 90 120 - - - - - - - - - - Unit V V µA µA V mΩ mΩ S p F p F p F ns ns ns ns V ns I F = 18A, VGS = 0 I F = 18A, VGS = 0 di F/ dt = 50A/µs Test Conditions I D = 10m A, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±16V, VDS = 0 VDS = 150 V, VGS = 0 I D = 1m A, VDS = 10V I D = 9A, VGS = 10V- 4 I D = 9A, VGS = 4V- 4 I D = 9A, VDS = 10V- 4 VDS = 10V VGS = 0 f = 1MHz I D = 9A, VGS = 10V RL = 3.33Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body- drain diode forward voltage I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF Body- drain diode reverse recovery t rr time Note: 4. Pulse test Package Dimensions Unit:...