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2SK3207
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-758A(Z) Target Specification 2nd. Edition Feb 1999 Features
• Low on-resistance R DS = 70 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
TO–220FM
D
G
1 2 S
1. Gate 2. Drain 3. Source
3
2SK3207
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse)* I DR I AP *
3 3 2 1
Ratings 150 ±20 18 72 18 18 24 35 150 –55 to +150
Unit V V A A A A mJ W °C °C
EAR*
Pch* Tch Tstg
1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3.
2SK3207 Datasheet
