2SK3204 Datasheet | NEC

DESCRIPTION The 2SK3204 is N-Channel MOS Field Effect Transistor designed for high current switching applications. - ORDERING INFORMATION PART NUMBER 2SK3204 PACKAGE MP-10 - FEATURES - Low on-state resistance : RDS(on)1 = 34 mΩ (MAX.) (VGS = 10 V, ID = 8 A) RDS(on)2 = 50 mΩ (MAX.) (VGS = 4 V, ID = 8 A) - Low Ciss : Ciss = 940 p F (TYP.) - Built-in gate protection diode. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT Tch Tstg Note2 Note2 60 ±20 +20, - 10 ±15 ±45 1.8 150 - 55 to +150 15 22.5 V V V A A W °C °C A m J Total Power Dissipation (TA = 25 °C) Channel Temperature Storage Temperature - - Single Avalanche Current Single Avalanche Energy IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V→0 V THERMAL RESISTANCE Channel to Ambient Rth(ch-A) 69.4 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13796EJ1V0DS00 (1st edition) Date Published April 1999 NS CP (K) Printed in Japan The mark - shows major revised points. © 1998, 1999 - ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMATERS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr IF = 15 A, VGS...