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2SK3209
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 40 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1090-0300 (Previous: ADE-208-759A)
Target Specification Rev.3.00
Sep 07, 2005
RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM)
D
G 1. Gate 2. Drain 3. Source
12 3
S
Rev.3.00 Sep 07, 2005 page 1 of 3
2SK3209
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C 3.
2SK3209 Datasheet
