2SK3209 Description
2SK3209 Silicon N Channel MOS FET High Speed Power Switching.
2SK3209 Key Features
- Low on-resistance RDS = 40 mΩ typ
- High speed switching
- 4 V gate drive device can be driven from 5 V source
- Part: 2SK3209
- Manufacturer: Renesas
- Size: 43.40 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Hitachi Semiconductor |
2SK3209 | N-Channel MOSFET |