2SK3209 Datasheet
2SK3209 Datasheet (Hitachi Semiconductor)
Hitachi Semiconductor
2SK3209 Silicon N Channel MOS FET High Speed Power Switching ADE-208-759(Z) Target Specification 1st. Edition December 1998 Features • Low on-resistance R DS =35mΩ typ. • High speed switching • 4V ga.
* Low on-resistance R DS =35mΩ typ.
* High speed switching
* 4V gate drive device can be driven from 5V source
Outline
TO
*220FM
D
G
1 2 S
1. Gate 2. Drain 3. Source
3
2SK3209
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak curre.
2SK3209 Datasheet (Renesas)
Renesas
2SK3209 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 40 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1.
* Low on-resistance RDS = 40 mΩ typ.
* High speed switching
* 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1090-0300 (Previous: ADE-208-759A)
Target Specification Rev.3.00
Sep 07, 2005
RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM)
D
G 1. Gate 2. Drain 3. Source.