2SK3209 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS =35mΩ typ. - High speed switching - 4V gate drive device can be driven from 5V source Outline TO- 220FM 1 2 S 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 150 ±20 25 100 25 25 46 35 150 - 55 to +150 Unit V V A A A A m J W °C °C Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min 150 ±20 - - 1.0 - - 18 - - - - - - - - - Typ - - - - - 0.035 0.042 30 2600 820 350 25 180 600 280 0.95 100 Max - - ±10 10 2.5 0.045 0.063 - - - - - - - - - - Unit V V µA µA V Ω Ω S p F p F p F ns ns ns ns V ns I F = 25A, VGS = 0 I F = 25A, VGS = 0 di F/ dt =50A/µs Test Conditions I D = 10m A, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±16V, VDS = 0 VDS = 150 V, VGS = 0 I D = 1m A, VDS = 10V I D =15A, VGS = 10VNote4 I D =15A, VGS = 4V Note4 I D =15A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz I D =15A, VGS = 10V RL = 2Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body- drain diode forward voltage Body- drain diode reverse recovery time Note: 4. Pulse test I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr Package Dimensions Unit:...