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Hitachi Power Semiconductor Device Electronic Components Datasheet

HL8325G Datasheet

GaAlAs Laser Diode

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HL8325G pdf
HL8325G
GaAlAs Laser Diode
Description
The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well)
structure. Its internal circuit configuration is suited for operation on a single positive supply voltage. It
is suitable as a light source for optical disk memories, card readers and various other types of optical
equipment.
Features
Infrared light output: λp = 820 to 840 nm
High power: standard continuous operation at 40 mW (CW), pulsed operation at 50 mW
Built-in monitor photodiode
Single longitudinal mode
190


Hitachi Power Semiconductor Device Electronic Components Datasheet

HL8325G Datasheet

GaAlAs Laser Diode

No Preview Available !

HL8325G pdf
Absolute Maximum Ratings (TC = 25°C)
Item
Symbol
Rated Value
Optical output power
Pulse optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
PO
PO (pulse)
VR (LD)
VR (PD)
Topr
40
50*1
2
30
–10 to +60
Storage temperature
Tstg
–40 to +85
Note: 1. Maximum 50% duty cycle, maximum 1 µs pulse width
HL8325G
Units
mW
mW
V
V
°C
°C
Optical and Electrical Characteristics (TC = 25 ± 3 °C)
Item
Symbol Min Typ Max Unit
Test Conditions
Optical output power
Threshold current
PO
40 — — mW
Kink free
Ith — 40 70 mA
Slope efficiency
Lasing wavelength
Beam divergence (parallel)
Beam divergence (perpendicular)
Monitor current
Astigmatism
η
λp
θ//
θ⊥
Is
AS
0.4 0.5 0.9 mW/mA 24 mW/ I (32 mW) – I (8 mW)
820 830 840 nm
PO = 40 mW
7 10 14 deg.
PO = 40 mW, FWHM
18 22 32 deg.
PO = 40 mW, FWHM
20 40 130 µA
VR (PD) = 5 V, PO = 4 mW
—5
— µm
PO = 4 mW, NA = 0.4
191


Part Number HL8325G
Description GaAlAs Laser Diode
Maker Hitachi Semiconductor
Total Page 4 Pages
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