.
Micropac Industries
62005-004 - GaAlAs LIGHT EMITTING DIODE PILL PACK
62005 GaAlAs LIGHT EMITTING DIODE “PILL PACK” Mii OPTOELECTRONIC PRODUCTS DIVISION REVISED 02/22/01 Features: • • • • • Hermetically sealed High o.
Sony Corporation
SLD105VL - GaAlAs Laser Diode
SLD105VL GaAlAs Laser Diode Description The SLD105VL is a low current consumption GaAlAs laser diode developed for CD. Features • Low current consumpt.
Toshiba
TLP580 - GaAlAs Infrared Emitting Diode and NPN Silicon Photo Transistor
w w w .d e e h s a t a . u t4 m o c www.DataSheet4U.com .
Hitachi
HE8811 - GaAlAs Infrared Emitting Diode
www.DataSheet4U.com HE8811 GaAlAs Infrared Emitting Diode ODE-208-999B (Z) Rev.2 Mar. 2005 Description The HE8811 is a GaAlAs infrared emitting diod.
Hitachi Semiconductor
HE8812SG - GaAlAs Infrared Emitting Diode
www.DataSheet4U.com HE8812SG GaAlAs Infrared Emitting Diode ODE-208-1000A (Z) Rev.1 Jan. 2003 Description The HE8812SG is a GaAlAs double heterojunc.
Hitachi Semiconductor
HL7851G - GaAlAs Laser Diode
HL7851G GaAlAs Laser Diode Description www.DataSheet4U.com structure. It is suitable as a light source for optical disk memories, levelers and variou.
Panasonic Semiconductor
LN189S - GaAlAs Infrared Light Emitting Diode
Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm Light source for distance measuring systems 5.0±0.3 6.0±0.3 3.4.
Unity Opto Technology
MIE-304L3 - GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE
GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE Description The MIE-304L3 is an infrared emitting diode in GaAlAs on GaAlAs technology molded in water clea.
Micropac Industries
62005-104 - GaAlAs LIGHT EMITTING DIODE PILL PACK
62005 GaAlAs LIGHT EMITTING DIODE “PILL PACK” Mii OPTOELECTRONIC PRODUCTS DIVISION REVISED 02/22/01 Features: • • • • • Hermetically sealed High o.
Micropac Industries
62074-101 - FIBER OPTIC GaAlAs LIGHT EMITTING DIODE
62074 FIBER OPTIC GaAlAs LIGHT EMITTING DIODE Mii OPTOELECTRONIC PRODUCTS DIVISION Features: • • • • Hermetically Sealed High Radiant Output for Fi.
Hitachi
HLP1400 - GaAlAs Laser Diode
HLP 1400 Bulk active zone Quelle: Hitachi Optodevice, Data book 5-6E, September 1993 1 HLP 1400 Quelle: Hitachi Optodevice, Data book 5-6E, Septem.
Hitachi
HE7601SG - GaAlAs Infrared Emitting Diode
www.DataSheet4U.com HE7601SG GaAlAs Infrared Emitting Diode ODE-208-996B (Z) Rev.2 Mar. 2005 Description The HE7601SG is a 770 nm band GaAlAs infrar.
Hitachi Semiconductor
HE8807FL - (HE8807FL/SG) GaAlAs Infrared Emitting Diodes
www.DataSheet4U.com HE8807SG/FL GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emittin.
Hitachi Semiconductor
HE8807SG - (HE8807FL/SG) GaAlAs Infrared Emitting Diodes
www.DataSheet4U.com HE8807SG/FL GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emittin.
ETC
CL304L - High-output GaAlAs IRED mounted
www.DataSheet4U.com ហٳႆήȀǤǪȸȉ )C#N#U +0(4#4'&'/+66+0)&+1&'5 )C#N#U CL304L %..ƸŴጏᡢଢᏢưȢȸȫȉƞǕƨ᭗Јщ)C#N#Uហٳ ႆήȀǤǪȸȉưƢŵᕓŴݱưܱᘺƕܾତưƢŵ %.
Opnext
HE8404SG - GaAlAs Infrared Emitting Diode
www.DataSheet4U.com HE8404SG GaAlAs Infrared Emitting Diode ODE-208-997B (Z) Rev.2 Mar. 2005 Description The HE8404SG is a GaAlAs double heterojunct.
Purdy Electronics
AND180CRP-B - GaAlAs Red Light Emission
Weight: 0.31 g 5.0±0.2 5.6±0.3 8.6±0.3 Unit: mm AND180CRP-B Ultra Bright LED Lamps: Type 1 AND180CRP-B GaAlAs Red Light Emission T-1 3/4 Package (.
Panasonic Semiconductor
LN671 - GaAlAs Infrared Light Emitting Diode
Infrared Light Emitting Diodes LN671 GaAlAs Infrared Light Emitting Diode Light source for distance measuring systems 4 5.3 max. 5.0±0.1 2.54±0.1 3 1.
OPTO DIODE
OD-880F - HIGH-POWER GaAlAs IR EMITTERS
HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME OD-880F FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission fo.
