GaAlAs Datasheet | Specifications & PDF Download

GaAlAs Infrared Emitting Diodes T-1¾ (5 mm) Plastic Package — 880 nm VTE1261, 1262 PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE 26 T-1¾ (5 mm) CH

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Semiconductor Laser LNC705PS GaAlAs Semiconductor Laser ø5.6 +0 –0.025 ø4.3±0.1 ø3.55±0.1 ø1.0 min. Unit : mm 2 Low threshold current Stable single

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Infrared Emitting Diodes(GaAlAs) K O D E N S H I AL-402 DIMENSIONS The AL-402 is a high-power GaAlAs IRED, with precision optical designed attachmen

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GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-524L3 is an infrared emitting diode in GaAlAs on GaAlAs technology molded in water

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62074 FIBER OPTIC GaAlAs LIGHT EMITTING DIODE Mii OPTOELECTRONIC PRODUCTS DIVISION Features: • • • • Hermetically Sealed High Radiant Output for Fi

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SLD105VL GaAlAs Laser Diode Description The SLD105VL is a low current consumption GaAlAs laser diode developed for CD. Features • Low current consumpt

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GaAlAs T-1 Standard 3 Infrared Emitting Diode LTE-4206/LTE-4206C/LTE-4216/LTE-4216C Features Selected to specific on-line intensity and radiant intens

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HIGH TEMPERATURE GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME ANODE (CASE) .015 .209 .220 OD-880FHT FEATURES • Extended operating temperature range • No i

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Infrared Emitting Diodes(GaAlAs) K O D E N S H I CL-208 DIMENSIONS The CL-208 is a high-power GaAlAs IRED mounted in durable, hermetically sealed TO

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62074 FIBER OPTIC GaAlAs LIGHT EMITTING DIODE Mii OPTOELECTRONIC PRODUCTS DIVISION Features: • • • • Hermetically Sealed High Radiant Output for Fi

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High Speed GaAlAs Infrared Emitter OPE5685 The OPE5685 is GaAlAs infrared emitting diode that is designed for high power, low forward voltage and hig

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GaAlAs Infrared Emitting Diodes Flat T-1¾ (5 mm) Plastic Package — 880 nm VTE1281F PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE 26F T-1¾ (5 mm) F

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GaAlAs-IR-Lumineszenzdioden (880 nm) GaAlAs Infrared Emitters (880 nm) SFH 480 SFH 481 SFH 482 2.54mm spacing ø0.45 ø4.8 ø4.6 1 0.9 .1 Chip posi

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U IR Emitting Diode in ø 5 mm (T–1¾ ) GaAs/GaAlAs 4 t Packageee at .D w Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on

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HI-REL GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME .015 OD-880LJ FEATURES ANODE (CASE) .209 .220 • High reliability LPE GaAlAs IRLEDs • High power out

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Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm Light source for distance measuring systems 5.0±0.3 6.0±0.3 3.4

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Semiconductor Laser LNC802PS GaAlAs Semiconductor Laser ø5.6 +0 –0.025 ø4.3±0.1 ø3.55±0.1 ø1.0 min. Y 0.4±0.1 110˚±1˚ Unit : mm 2 Features Low thre

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