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LN184 - GaAlAs Infrared Light Emitting Diode

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Features

  • High-power output, high-efficiency : PO = 5 mW (typ. ) Fast response and high-speed modulation capability : tr, tf = 20 ns(typ. ) Infrared light emission close to monochromatics light : λP = 880 nm (typ. ) Narrow directivity using spherical lenses; works well with optical systems in auto focus systems 4.5±0.2 2.0 (0.29) ,,, ø4.6±0.15 1.0 max. Unit : mm Glass window Spherical lens 12.7 min. (0.4) 2-ø0.45±0.05 2.45±0.25 2 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forw.

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Datasheet Details

Part number LN184
Manufacturer Panasonic Semiconductor
File Size 41.85 KB
Description GaAlAs Infrared Light Emitting Diode
Datasheet download datasheet LN184 Datasheet
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Infrared Light Emitting Diodes LN184 GaAlAs Infrared Light Emitting Diode Light source for distance measuring systems Features High-power output, high-efficiency : PO = 5 mW (typ.) Fast response and high-speed modulation capability : tr, tf = 20 ns(typ.) Infrared light emission close to monochromatics light : λP = 880 nm (typ.) Narrow directivity using spherical lenses; works well with optical systems in auto focus systems 4.5±0.2 2.0 (0.29) ,,, ø4.6±0.15 1.0 max. Unit : mm Glass window Spherical lens 12.7 min. (0.4) 2-ø0.45±0.05 2.45±0.
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