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LN189S

GaAlAs Infrared Light Emitting Diode

LN189S Features

* High-power output, high-efficiency : PO = 5.5 mW (typ.) Fast response and high-speed modulation capability : tr, tf =20 ns (typ.) Infrared light emission close to monochromatic light : λP = 880 nm(typ.) Narrow direcivity using spherical lenses; works well with optical systems in auto focus systems

LN189S Datasheet (44.03 KB)

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Datasheet Details

Part number:

LN189S

Manufacturer:

Panasonic Semiconductor

File Size:

44.03 KB

Description:

Gaalas infrared light emitting diode.
Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm Light source for distance measuring systems 5.0±0.3 6.0±0.3 3.4.

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LN189S GaAlAs Infrared Light Emitting Diode Panasonic Semiconductor

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