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LN189S GaAlAs Infrared Light Emitting Diode

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Description

Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm Light source for distance measuring systems 5.0±0.3 6.0±0.3 3.4.

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Datasheet Specifications

Part number
LN189S
Manufacturer
Panasonic Semiconductor
File Size
44.03 KB
Datasheet
LN189S_PanasonicSemiconductor.pdf
Description
GaAlAs Infrared Light Emitting Diode

Features

* High-power output, high-efficiency : PO = 5.5 mW (typ. ) Fast response and high-speed modulation capability : tr, tf =20 ns (typ. ) Infrared light emission close to monochromatic light : λP = 880 nm(typ. ) Narrow direcivity using spherical lenses; works well with optical systems in auto focus systems

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Panasonic Semiconductor LN189S-like datasheet