LN189S - GaAlAs Infrared Light Emitting Diode

Panasonic Semiconductor

Datasheet Details

Part number	LN189S
Manufacturer	Panasonic Semiconductor
File Size	44.03 KB
Description	GaAlAs Infrared Light Emitting Diode
Datasheet	LN189S_PanasonicSemiconductor.pdf

High-power output, high-efficiency : PO = 5.5 mW (typ. ) Fast response and high-speed modulation capability : tr, tf =20 ns (typ. ) Infrared light emission close to monochromatic light : λP = 880 nm(typ. ) Narrow direcivity using spherical lenses; works well with optical systems in auto focus systems , , , 2 3.2±0.15 0.1 max. 1.0 0.6±0.1 0.3 0.2 Spherical lens ø0.4±0.03 0.6±0.1 0.5±0.1 0.15 1.5±0.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse f.

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Published: Mar 22, 2005 |