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LN100 - N-Channel MOSFET

Datasheet Summary

Description

The LN100 is a 1200V cascoded N-channel MOSFET with an integrated high value high voltage resistor divider.

Multiple devices can be used in series for voltages greater than 1200V.

A resistor divider ratio of 1000:1 is provided.

Features

  • 1200V breakdown voltage.
  • Low threshold, 1.6V max.
  • High input impedance.
  • Low input capacitance.
  • Integrated high voltage resistor divider.
  • Integrated 1000:1 resistor divider.
  • Compact 3x3 LFGA package.

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Datasheet preview – LN100

Datasheet Details

Part number LN100
Manufacturer Supertex
File Size 311.08 KB
Description N-Channel MOSFET
Datasheet download datasheet LN100 Datasheet
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Full PDF Text Transcription

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Supertex inc. LN100 1200V Cascoded N-Channel MOSFET Features ►► 1200V breakdown voltage ►► Low threshold, 1.6V max. ►► High input impedance ►► Low input capacitance ►► Integrated high voltage resistor divider ►► Integrated 1000:1 resistor divider ►► Compact 3x3 LFGA package Applications ►► High voltage shunt regulator ►► High voltage linear amplifier ►► High voltage digital pulsers ►► High voltage sensing circuit General Description The LN100 is a 1200V cascoded N-channel MOSFET with an integrated high value high voltage resistor divider. Multiple devices can be used in series for voltages greater than 1200V. A resistor divider ratio of 1000:1 is provided. High value resistors are used to minimize power consumption. The maximum Gate-to-Source threshold voltage is 1.6V.
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