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LN189L - GaAlAs Infrared Light Emitting Diode

Datasheet Summary

Features

  • High-power output, high-efficiency : PO = 5.5 mW (typ. ) Fast response and high-speed modulation capability : tr, tf = 20 ns (typ. ) Infrared light emission close to monochromatic light : λP = 880 nm(typ. ) Narrow directivity using spherical lenses; works well with optical systems in auto focus systems , , , 2 3.2±0.15 0.75 0.35 Mark (Red) 0.38 0.6±0.1 0.2 Spherical lens ø0.55±0.05 0.6±0.1 0.5±0.1 1.5±0.2 ,, , ,, 0.15 Mini hollow mold resin package Absolute Maximum Ratings (Ta = 25˚C) Parame.

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Datasheet Details

Part number LN189L
Manufacturer Panasonic Semiconductor
File Size 43.98 KB
Description GaAlAs Infrared Light Emitting Diode
Datasheet download datasheet LN189L Datasheet
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Full PDF Text Transcription

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Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm Light source for distance measuring systems 5.0±0.3 6.0±0.3 3.4±0.2 3.0±0.2 4.0±0.15 1.0 0.6 1 0.4±0.1 3.0±0.15 Features High-power output, high-efficiency : PO = 5.5 mW (typ.) Fast response and high-speed modulation capability : tr, tf = 20 ns (typ.) Infrared light emission close to monochromatic light : λP = 880 nm(typ.) Narrow directivity using spherical lenses; works well with optical systems in auto focus systems , , , 2 3.2±0.15 0.75 0.35 Mark (Red) 0.38 0.6±0.1 0.2 Spherical lens ø0.55±0.05 0.6±0.1 0.5±0.1 1.5±0.2 ,, , ,, 0.
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