Datasheet4U Logo Datasheet4U.com

LN189L GaAlAs Infrared Light Emitting Diode

LN189L Description

Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm Light source for distance measuring systems 5.0±0.3 6.0±0.3 3.4.

LN189L Features

* High-power output, high-efficiency : PO = 5.5 mW (typ. ) Fast response and high-speed modulation capability : tr, tf = 20 ns (typ. ) Infrared light emission close to monochromatic light : λP = 880 nm(typ. ) Narrow directivity using spherical lenses; works well with optical systems in auto focus systems

📥 Download Datasheet

Preview of LN189L PDF
datasheet Preview Page 2

Datasheet Details

Part number
LN189L
Manufacturer
Panasonic Semiconductor
File Size
43.98 KB
Datasheet
LN189L_PanasonicSemiconductor.pdf
Description
GaAlAs Infrared Light Emitting Diode

📁 Related Datasheet

  • LN1851CTR - Surface Mounting Chip LED (Panasonic)
  • LN1861CTR - Surface Mounting Chip LED (Panasonic)
  • LN1871Y5TR - Surface Mounting Chip LED (Panasonic)
  • LN100 - N-Channel MOSFET (Supertex)
  • LN1001 - single-chip Power Bank dedicated IC (natlinear)
  • LN10N10 - 10A/100V withstand voltage N-channel enhanced FET (natlinear)
  • LN1120 - 300mA Low Dropout CMOS Voltage Regulators (natlinear)
  • LN1121 - Ultra low Power Consumption Low Dropout CMOS Voltage Regulators (natlinear)

📌 All Tags

GaAlAs Infrared Light Emitting Diode Panasonic Semiconductor
Panasonic Semiconductor LN189L-like datasheet