LN189M - GaAlAs Infrared Light Emitting Diode

Panasonic Semiconductor

Datasheet Details

Part number	LN189M
Manufacturer	Panasonic Semiconductor
File Size	36.52 KB
Description	GaAlAs Infrared Light Emitting Diode
Datasheet	LN189M_PanasonicSemiconductor.pdf

High-power output, high-efficiency: PO = 5.5 mW (typ. ).
Fast response and high-speed modulation capability: tr, tf = 20 ns (typ. ).
Infrared light emission close to monochromatic light: λP = 880 nm (typ. ).
Narrow directivity using spherical lenses; works well with optical systems in auto focus systems 6.0±0.3 1 0.4±0.1 Mark (Black) 0.3 , , , 0.6 4.0±0.15 1.0 2 0.6±0.1 3.0±0.2 0.2 3.4±0.2 6.0±0.3 Spherical lens φ0.4±0.03 0.6±0.1 0.5±0.1 0.15 0.75 2.

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Published: Mar 22, 2005 |