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LN189M

GaAlAs Infrared Light Emitting Diode

LN189M Features

* High-power output, high-efficiency: PO = 5.5 mW (typ.)

* Fast response and high-speed modulation capability: tr, tf = 20 ns (typ.)

* Infrared light emission close to monochromatic light: λP = 880 nm (typ.)

* Narrow directivity using spherical lenses; works well with

LN189M Datasheet (36.52 KB)

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Datasheet Details

Part number:

LN189M

Manufacturer:

Panasonic Semiconductor

File Size:

36.52 KB

Description:

Gaalas infrared light emitting diode.

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LN189M GaAlAs Infrared Light Emitting Diode Panasonic Semiconductor

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