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LN189M - GaAlAs Infrared Light Emitting Diode

Datasheet Summary

Features

  • High-power output, high-efficiency: PO = 5.5 mW (typ. ).
  • Fast response and high-speed modulation capability: tr, tf = 20 ns (typ. ).
  • Infrared light emission close to monochromatic light: λP = 880 nm (typ. ).
  • Narrow directivity using spherical lenses; works well with optical systems in auto focus systems 6.0±0.3 1 0.4±0.1 Mark (Black) 0.3 , , , 0.6 4.0±0.15 1.0 2 0.6±0.1 3.0±0.2 0.2 3.4±0.2 6.0±0.3 Spherical lens φ0.4±0.03 0.6±0.1 0.5±0.1 0.15 0.75 2.

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Datasheet Details

Part number LN189M
Manufacturer Panasonic Semiconductor
File Size 36.52 KB
Description GaAlAs Infrared Light Emitting Diode
Datasheet download datasheet LN189M Datasheet
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Full PDF Text Transcription

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Infrared Light Emitting Diodes LN189M GaAlAs Infrared Light Emitting Diode Unit: mm Light source for distance measuring systems s Features • High-power output, high-efficiency: PO = 5.5 mW (typ.) • Fast response and high-speed modulation capability: tr, tf = 20 ns (typ.) • Infrared light emission close to monochromatic light: λP = 880 nm (typ.) • Narrow directivity using spherical lenses; works well with optical systems in auto focus systems 6.0±0.3 1 0.4±0.1 Mark (Black) 0.3 , , , 0.6 4.0±0.15 1.0 2 0.6±0.1 3.0±0.2 0.2 3.4±0.2 6.0±0.3 Spherical lens φ0.4±0.03 0.6±0.1 0.5±0.1 0.15 0.75 2.0±0.
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