LN189M GaAlAs Infrared Light Emitting Diode

Panasonic Semiconductor

Description

Infrared Light Emitting Diodes LN189M GaAlAs Infrared Light Emitting Diode Unit: mm Light source for distance measuring systems s .

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Datasheet Specifications

Part number: LN189M
Manufacturer: Panasonic Semiconductor
File Size: 36.52 KB
Datasheet: LN189M_PanasonicSemiconductor.pdf
Description: GaAlAs Infrared Light Emitting Diode

Features

* High-power output, high-efficiency: PO = 5.5 mW (typ. )
* Fast response and high-speed modulation capability: tr, tf = 20 ns (typ. )
* Infrared light emission close to monochromatic light: λP = 880 nm (typ. )
* Narrow directivity using spherical lenses; works well with

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LN189M GaAlAs Infrared Light Emitting Diode Panasonic Semiconductor

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