Datasheet Details
Part number:
LN78
Manufacturer:
Panasonic Semiconductor
File Size:
35.31 KB
Description:
GaAlAs Infrared Light Emitting Diode
Features
* High-power output, high-efficiency : PO = 10 mW (typ.) High-speed modulation capability : fC = 12 MHz 12.8 min. 2.8 2.4 2-1.2±0.3 Not soldered 1.2 0.9 1.7±0.2 0.8 1.5 2-0.45±0.15 1 2.54 R1.2 2 0.45±0.15 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC)
