LN75X GaAlAs Infrared Light Emitting Diode

Panasonic Semiconductor

Description

Infrared Light Emitting Diodes LN75X GaAlAs Infrared Light Emitting Diode Unit : mm For optical control systems .

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Datasheet Specifications

Part number: LN75X
Manufacturer: Panasonic Semiconductor
File Size: 35.32 KB
Datasheet: LN75X_PanasonicSemiconductor.pdf
Description: GaAlAs Infrared Light Emitting Diode

Features

* High-power output, high-efficiency : PO = 10 mW (typ. ) High-speed modulation capability : fC = 12 MHz 4.5±0.3 Not soldered ø3.5±0.2 4.8±0.3 2.4 2.4 4.2±0.3 2.3 1.9 2.8 1.8 1.0 12.8 min. 10.0 min. 2-0.98±0.2 2-0.45±0.15 0.45±0.15 2.54 R1.75 1.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter

LN75X Distributors

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LN75X GaAlAs Infrared Light Emitting Diode Panasonic Semiconductor

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