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Hitachi Power Semiconductor Device Electronic Components Datasheet

HM62V16258B Datasheet

4 M SRAM (256-kword x 16-bit)

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HM62V16258B Series
4 M SRAM (256-kword × 16-bit)
ADE-203-975B (Z)
Rev. 2.0
Oct. 14, 1999
Description
The Hitachi HM62V16258B Series is 4-Mbit static RAM organized 262,144-word × 16-bit. HM62V16258B
Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS
process technology. It offers low power standby power dissipation; therefore, it is suitable for battery backup
systems. It is packaged in standard 44-pin plastic TSOPII.
Features
Single 3.0 V supply: 2.7 V to 3.6 V
Fast access time: 70 ns/85 ns (max)
Power dissipation:
Active: 9 mW (typ)
Standby: 3 µW (typ)
Completely static memory.
No clock or timing strobe required
Equal access and cycle times
Common data input and output.
Three state output
Battery backup operation.


Hitachi Power Semiconductor Device Electronic Components Datasheet

HM62V16258B Datasheet

4 M SRAM (256-kword x 16-bit)

No Preview Available !

HM62V16258B Series
Ordering Information
Type No.
HM62V16258BLTT-7
HM62V16258BLTT-8
HM62V16258BLTT-7SL
HM62V16258BLTT-8SL
Access time
70 ns
85 ns
70 ns
85 ns
Package
400-mil 44-pin plastic TSOPII (normal-bend type) (TTP-44DB)
2


Part Number HM62V16258B
Description 4 M SRAM (256-kword x 16-bit)
Maker Hitachi Semiconductor
Total Page 16 Pages
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