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Hitachi Power Semiconductor Device Electronic Components Datasheet

HM62W4100HC Datasheet

4M High Speed SRAM (1-Mword x 4-bit)

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HM62W4100HC Series
4M High Speed SRAM (1-Mword × 4-bit)
ADE-203-1202 (Z)
Preliminary
Rev. 0.0
Sep. 28, 2000
Description
The HM62W4100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high
speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing
technology. It is most appropriate for the application which requires high speed and high density memory,
such as cache and buffer memory in system. The HM62W4100HC is packaged in 400-mil 32-pin SOJ for
high density surface mounting.
Features
Single supply : 3.3 V ± 0.3 V
Access time : 10 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current : 115 mA (max)
TTL standby current : 40 mA (max)
CMOS standby current : 5 mA (max)
: 1 mA (max) (L-version)
Data retension current : 0.6 mA (max) (L-version)
Data retension voltage: 2 V (min) (L-version)
Center VCC and VSS type pinout
Preliminary: The specification of this device are subject to change without notice. Please contact your nearest
Hitachi’s Sales Dept. regarding specification.


Hitachi Power Semiconductor Device Electronic Components Datasheet

HM62W4100HC Datasheet

4M High Speed SRAM (1-Mword x 4-bit)

No Preview Available !

HM62W4100HC Series
Ordering Information
Type No.
HM62W4100HCJP-10
HM62W4100HCLJP-10
Access time
10 ns
10 ns
Package
400-mil 32-pin plastic SOJ (CP-32DB)
2



Part Number HM62W4100HC
Description 4M High Speed SRAM (1-Mword x 4-bit)
Maker Hitachi Semiconductor
Total Page 14 Pages
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HM62W4100HC Datasheet PDF





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