HM62W4100H Datasheet (4M High Speed SRAM (1-Mword x 4-bit))

Part: HM62W4100H
Manufacturer: Hitachi Semiconductor
Size: 73.86 KB

HM62W4100H Key Features

Single supply : 3.3 V ± 0.3 V
Access time 12/15 ns (max)
pletely static memory  No clock or timing strobe required
Equal access and cycle times
Directly TTL patible  All inputs and outputs
Operating current : 180/160 mA (max)
TTL standby current : 60/50 mA (max)
CMOS standby current : 5 mA (max) : 1 mA (max) (L-version)
Data retension current : 0.6 mA (max) (L-version)
Data retension voltage: 2 V (min) (L-version)

Related Hitachi Semiconductor Datasheets

Part Number	Description
HM62W4100HC	4M High Speed SRAM (1-Mword x 4-bit)
HM62W1400H	4M High Speed SRAM
HM62W16255H	4M High Speed SRAM (256-kword x 16-bit)
HM62W16255HC	4M High Speed SRAM (256-kword x 16-bit)
HM62W16255HI	4M High Speed SRAM (256-kword x 16-bit)

HM62W4100H Description

The HM62W4100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system.