HM62W4100H - 4M High Speed SRAM (1-Mword x 4-bit)

Product Overview

Hitachi Semiconductor

Datasheet Details

Part number	HM62W4100H
Manufacturer	Hitachi Semiconductor
File Size	73.86 KB
Description	4M High Speed SRAM (1-Mword x 4-bit)
Datasheet	HM62W4100H Datasheet
Additional preview pages of the HM62W4100H datasheet.

HM62W4100H Product details

Description

The HM62W4100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit.

It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology.

Features

Single supply : 3.3 V ± 0.3 V.
Access time 12/15 ns (max).
Completely static memory  No clock or timing strobe required.
Equal access and cycle times.
Directly TTL compatible  All inputs and outputs.
Operating current : 180/160 mA (max).
TTL standby current : 60/50 mA (max).
CMOS standby current : 5 mA (max) : 1 mA (max) (L-version).
Data retension current : 0.6 mA (max) (L-version).
Data retension volta.

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Published: Mar 26, 2005 |