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HM62W1400H Datasheet

Manufacturer: Hitachi Semiconductor (now Renesas)
HM62W1400H datasheet preview

Datasheet Details

Part number HM62W1400H
Datasheet HM62W1400H_HitachiSemiconductor.pdf
File Size 104.78 KB
Manufacturer Hitachi Semiconductor (now Renesas)
Description 4M High Speed SRAM
HM62W1400H page 2 HM62W1400H page 3

HM62W1400H Overview

The HM62W1400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system.

HM62W1400H Key Features

  • Single 3.3 V supply : 3.3 V ± 0.3 V
  • Access time 12/15 ns (max)
  • pletely static memory  No clock or timing strobe required
  • Equal access and cycle times
  • Directly TTL patible  All inputs and outputs
  • Operating current: 180/160 mA (max)
  • TTL standby current: 60/50 mA (max)
  • CMOS standby current: 5 mA (max) : 1 mA (max) (L-version)
  • Data retension current: 0.6 mA (max) (L-version)
  • Data retension voltage: 2 V (min) (L-version)
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HM62W1400H Distributor

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