Datasheet4U Logo Datasheet4U.com

HM62W1400H - 4M High Speed SRAM

Datasheet Summary

Description

The HM62W1400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit.

It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology.

Features

  • Single 3.3 V supply : 3.3 V ± 0.3 V.
  • Access time 12/15 ns (max).
  • Completely static memory  No clock or timing strobe required.
  • Equal access and cycle times.
  • Directly TTL compatible  All inputs and outputs.
  • Operating current: 180/160 mA (max).
  • TTL standby current: 60/50 mA (max).
  • CMOS standby current: 5 mA (max) : 1 mA (max) (L-version).
  • Data retension current: 0.6 mA (max) (L-version).
  • Data retension vol.

📥 Download Datasheet

Datasheet preview – HM62W1400H

Datasheet Details

Part number HM62W1400H
Manufacturer Hitachi Semiconductor
File Size 104.78 KB
Description 4M High Speed SRAM
Datasheet download datasheet HM62W1400H Datasheet
Additional preview pages of the HM62W1400H datasheet.

📁 Similar Datasheet

  • HM6203 - High Input Voltage LDO Linear Regulators (H&M semi)
  • HM6207 - ultra sensitive hall effect switch (H&M semi)
  • HM6207H - 256K High Speed SRAM (Hitachi)
  • HM6208 - 4 Bit CMOS Static RAM (Hitachi)
  • HM621100A - 1048576 word / 1 Bit High Speed CMOS Static RAM (Hitachi)
  • HM6215 - Fast Transient Response LDO (H&M Semiconductor)
  • HM6216 - positive voltage regulators (H&M semi)
  • HM6216514I - 8M SRAM (Renesas)
  • HM6221 - High PSRR LDO (H&M Semiconductor)
  • HM62256 - 32768 word x 8-Bit High Speed CMOS Static RAM (Hitachi)
Other Datasheets by Hitachi Semiconductor

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com HM62W1400H Series 4M High Speed SRAM (4-Mword × 1-bit) ADE-203-773E (Z) Rev. 2.0 Nov. 11, 1998 Description The HM62W1400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system. The HM62W1400H is packaged in 400-mil 32-pin SOJ and 400-mil 32-pin TSOP II for high density surface mounting. Features • Single 3.3 V supply : 3.3 V ± 0.
Published: |