HM62W16255HI Datasheet | Hitachi Semiconductor

HM62W16255HI Series 4M High Speed SRAM (256-kword × 16-bit) ADE-203-1038B (Z) Rev. 2.0 Jan. 20, 2000 Description The HM62W16255HI is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII. Features - Single 3.3 V supply: 3.3 V ± 0.3V - Access time: 15 ns (max) - pletely static memory  No clock or timing strobe required - Equal access and cycle times - Directly TTL patible  All inputs and outputs - Operating current: 160 m A (max) - TTL standby current: 50 m A (max) - CMOS standby current: 5 m A (max) - Center VCC and VSS type pinout - Temperature range: - 40 to 85°C HM62W16255HI Series Ordering Information Type No. HM62W16255HJPI-15 HM62W16255HTTI-15 Access time 15 ns 15 ns Package 400-mil 44-pin plastic SOJ (CP-44D) 400-mil 44-pin plastic TSOPII (TTP-44DE) Pin Arrangement HM62W16255HJPI Series A0 A1 A2 A3 A4 CS I/O1 I/O2 I/O3 I/O4 VCC VSS I/O5 I/O6 I/O7 I/O8 WE A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A17 A16 A15 OE UB LB I/O16 I/O15 I/O14 I/O13 VSS VCC I/O12 I/O11 I/O10 I/O9 NC A14 A13 A12 A11 A10 HM62W16255HTTI Series A0 A1 A2 A3 A4 CS I/O1 I/O2 I/O3 I/O4 VCC VSS I/O5 I/O6 I/O7 I/O8 WE A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A17 A16 A15 OE UB LB I/O16 I/O15 I/O14 I/O13 VSS VCC I/O12 I/O11 I/O10 I/O9 NC A14 A13 A12 A11 A10 (Top View) (Top View) HM62W16255HI Series Pin Description Pin name A0 to A17 I/O1 to I/O16 CS OE WE UB LB VCC VSS NC Function Address input Data...