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K1518 - 2SK1518

Features

  • Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1517, 2SK1518 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1517 2SK1518 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
K1515 2SK1515
K1567 2SK1567

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK1517, 2SK1518 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1517, 2SK1518 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1517 2SK1518 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature www.DataSheet4U.com Symbol VDSS Ratings 450 500 ±30 20 Unit V VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 V A A A W °C °C 80 20 120 150 –55 to +150 Notes: 1.
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