Datasheet4U Logo Datasheet4U.com

K3209 Datasheet 2SK3209

Manufacturer: Hitachi Semiconductor (now Renesas)

📥 Download Datasheet

Overview

2SK3209 Silicon N Channel MOS FET High Speed Power Switching ADE-208-759(Z) Target Specification 1st.

Key Features

  • Low on-resistance R DS =35mΩ typ.
  • High speed switching.
  • 4V gate drive device can be driven from 5V source Outline TO.
  • 220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 Free Datasheet http://www. Datasheet-PDF. com/ 2SK3209 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Stora.

More Datasheets from Hitachi Semiconductor (now Renesas)

Part Number Description
K320 2SK320
K3228 2SK3228