4V gate drive device can be driven from 5V source
Outline
TO.
220AB
D
G
1 2 S 3
1. Gate 2. Drain(Flange) 3. Source
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2SK3228
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage tempera.
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2SK3228
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-765A(Z) Target specification 2nd. Edition December 1998 Features
• Low on-resistance R DS(on) =6mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source
Outline
TO–220AB
D
G
1 2 S 3
1. Gate 2. Drain(Flange) 3. Source
http://www.Datasheet4U.com
2SK3228
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse)* I DR I AP *
3 3 2 1
Ratings 80 ±20 75 300 75 50 181 100 150 –55 to +150
Unit V V A A A A mJ W °C °C
EAR*
Pch* Tch Tstg
1.
K3228 Datasheet
