• Phototransistor output
• Four mounting configurations
• Accurate position sensing
• 0.125 in.(3.18 mm) slot width
• Choice of detector aperture
• 24.0 in.(610 mm) min. 26 AWG UL 1429 wire
• Choice of opaque or IR transmissive housings
The HOA088X/089X series consists of an infrared
emitting diode facing an NPN silicon phototransistor
encased in a black thermoplastic housing.
Phototransistor switching takes place whenever an
opaque object passes through the slot between emitter
and detector. This series allows the user to choose from
available options: (1) mounting tab configuration, (2)
detector aperture size, (3) electro-optical
characteristics, and (4) housing materials.
All devices employ a built-in strain relief for maximum
wire attachment strength. The HOA088X series utilizes
an IR transmissive polysulfone housing which features
smooth optical faces without external aperture
openings; this feature is desirable when aperture
blockage from airborne contaminants is a possibility.
The HOA089X series employs an opaque polysulfone
housing with aperture openings for use in applications
in which maximum rejection of ambient light is important
and in situations where maximum position resolution is
desired. The HOA088X/089X series employs plastic
molded components. For additional component
information see SEP8506 and SDP8406.
Housing material is polysulfone. Housings are soluble in
chlorinated hydrocarbons and ketones. Recommended
cleaning agents are methanol and isopropanol.
The detector to emitter lead spacing is 0.32 in.(8.13
mm) for all versions. Wire color code and functions are:
OUTLINE DIMENSIONS in inches (mm)
Tolerance 3 plc decimals ±0.010(0.25)
2 plc decimals ±0.020(0.51)
Red - IRED Anode
White - Detector Collector
Black - IRED Cathode Green - Detector Emitter
To specify the complete product characteristics, see
PART NUMBER GUIDE.
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.