HX2000 Key Features
- Fabricated on Honeywell’s Radiation Hardened
- 0.65 µmLeff RICMOS™ IV SOI Process, HX2000
- 0.55 µmLeff RICMOS™ IV SOI Process, HX2000r
- Array Sizes from 40K to 390K Available Gates (Raw)
- HX2000 Supports 5V Core Operation
- HX2000r .. Supports 3.3V Core Operation
- Total Dose Hardness ≥1x106 rad(SiO2)
- Dose Rate Survivability ≥1x1012 rad(Si)/sec
- Soft Error Rate ≤1x10-11 Errors/Bit/Day, HX2000 ≤1x10-10 Errors/Bit/Day, HX2000r
- Neutron Fluence Hardness to 1x1014/cm2