HX2000R Datasheet | Honeywell

RICMOS™ SOI GATE ARRAYS Features - Fabricated on Honeywell’s Radiation Hardened - 0.65 µmLeff RICMOS™ IV SOI Process, HX2000 - 0.55 µmLeff RICMOS™ IV SOI Process, HX2000r - Array Sizes from 40K to 390K Available Gates (Raw) - HX2000 Supports 5V Core Operation - HX2000r .. Supports 3.3V Core Operation HX2000 HX2000r FAMILY - Total Dose Hardness ≥1x106 rad(SiO2) - Dose Rate Upset Hardness: ≥1x1010 rad(Si)/sec, HX2000- ≥1x109 rad(Si)/sec, HX2000r- Option Available for: ≥1x1011 rad(Si)/sec, HX2000- ≥1x1010 rad(Si)/sec, HX2000r- - Dose Rate Survivability ≥1x1012 rad(Si)/sec- - Soft Error Rate ≤1x10-11 Errors/Bit/Day, HX2000 ≤1x10-10 Errors/Bit/Day, HX2000r - Neutron Fluence...