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HX2000 - SOI GATE ARRAYS

General Description

The HX2000 and HX2000r gate arrays are performance oriented sea-of-transistor arrays, fabricated on Honeywell’s RICMOS™ IV Silicon On Insulator (SOI) process.

The HX2000 arrays are for 5V designs only.

The HX2000r arrays support 5V and 3.3V operation.

Key Features

  • Fabricated on Honeywell’s Radiation Hardened.
  • 0.65 µmLeff RICMOS™ IV SOI Process, HX2000.
  • 0.55 µmLeff RICMOS™ IV SOI Process, HX2000r.
  • Array Sizes from 40K to 390K Available Gates (Raw).
  • HX2000 Supports 5V Core Operation.
  • HX2000r www. DataSheet4U. com Supports 3.3V Core Operation HX2000 HX2000r FAMILY.
  • Total Dose Hardness ≥1x106 rad(SiO2).
  • Dose Rate Upset Hardness: ≥1x1010 rad(Si)/sec, HX2000.
  • ≥1x109 rad(Si)/sec, HX2000r.

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Datasheet Details

Part number HX2000
Manufacturer Honeywell
File Size 52.73 KB
Description SOI GATE ARRAYS
Datasheet download datasheet HX2000 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RICMOS™ SOI GATE ARRAYS FEATURES • Fabricated on Honeywell’s Radiation Hardened – 0.65 µmLeff RICMOS™ IV SOI Process, HX2000 – 0.55 µmLeff RICMOS™ IV SOI Process, HX2000r • Array Sizes from 40K to 390K Available Gates (Raw) • HX2000 Supports 5V Core Operation • HX2000r www.DataSheet4U.com Supports 3.3V Core Operation HX2000 HX2000r FAMILY • Total Dose Hardness ≥1x106 rad(SiO2) • Dose Rate Upset Hardness: ≥1x1010 rad(Si)/sec, HX2000* ≥1x109 rad(Si)/sec, HX2000r* Option Available for: ≥1x1011 rad(Si)/sec, HX2000* ≥1x1010 rad(Si)/sec, HX2000r* • Dose Rate Survivability ≥1x1012 rad(Si)/sec* • Soft Error Rate ≤1x10-11 Errors/Bit/Day, HX2000 ≤1x10-10 Errors/Bit/Day, HX2000r • Neutron Fluence Hardness to 1x1014/cm2 • HX2000r Supports Mixed Voltage I/O Buffers • TTL (5V) or CMOS (5V/3.