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HX2000 Datasheet Soi Gate Arrays

Manufacturer: Honeywell

Overview: RICMOS™ SOI GATE ARRAYS.

Datasheet Details

Part number HX2000
Manufacturer Honeywell
File Size 52.73 KB
Description SOI GATE ARRAYS
Datasheet HX2000_Honeywell.pdf

General Description

The HX2000 and HX2000r gate arrays are performance oriented sea-of-transistor arrays, fabricated on Honeywell’s RICMOS™ IV Silicon On Insulator (SOI) process.

The HX2000 arrays are for 5V designs only.

The HX2000r arrays support 5V and 3.3V operation.

Key Features

  • Fabricated on Honeywell’s Radiation Hardened.
  • 0.65 µmLeff RICMOS™ IV SOI Process, HX2000.
  • 0.55 µmLeff RICMOS™ IV SOI Process, HX2000r.
  • Array Sizes from 40K to 390K Available Gates (Raw).
  • HX2000 Supports 5V Core Operation.
  • HX2000r www. DataSheet4U. com Supports 3.3V Core Operation HX2000 HX2000r FAMILY.
  • Total Dose Hardness ≥1x106 rad(SiO2).
  • Dose Rate Upset Hardness: ≥1x1010 rad(Si)/sec, HX2000.
  • ≥1x109 rad(Si)/sec, HX2000r.

More Datasheets from Honeywell

Part Number Description
HX2000R SOI GATE ARRAYS

HX2000 Distributor