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CS4N60FA9HD Datasheet Silicon N-Channel Power MOSFET

Manufacturer: Huajing Discrete Devices

Datasheet Details

Part number CS4N60FA9HD
Manufacturer Huajing Discrete Devices
File Size 317.67 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS4N60FA9HD Datasheet

General Description

: CS4N60F A9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

The package form is TO-220F, which accords with the RoHS standard.

Overview

Huajing Discrete Devices ○R Silicon N-Channel Power MOSFET CS4N60F A9HD.

Key Features

  • l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test.