CS4N60FA9TDY - Silicon N-Channel Power MOSFET

Product Overview

Huajing Microelectronics

Datasheet Details

Part number	CS4N60FA9TDY
Manufacturer	Huajing Microelectronics
File Size	344.09 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS4N60FA9TDY Datasheet
Additional preview pages of the CS4N60FA9TDY datasheet.

Product details

Description

CS4N60F A9TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard.

Features

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 13nC) l Low Reverse transfer capacitances(Typical: 2.2pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |