CS4N60A7HD datasheet by Huajing Microelectronics.
| Part number | CS4N60A7HD |
|---|---|
| Datasheet | CS4N60A7HD-HuajingMicroelectronics.pdf |
| File Size | 339.75 KB |
| Manufacturer | Huajing Microelectronics |
| Description | Silicon N-Channel Power MOSFET |
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： CS4N60 A7HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-126F, which accords with the RoHS standard.
View all Huajing Microelectronics datasheets
| Part Number | Description |
|---|---|
| CS4N60A3HD | Silicon N-Channel Power MOSFET |
| CS4N60A3R | Silicon N-Channel Power MOSFET |
| CS4N60A3TDY | Silicon N-Channel Power MOSFET |
| CS4N60A4HD | Silicon N-Channel Power MOSFET |
| CS4N60A4R | Silicon N-Channel Power MOSFET |
| CS4N60A4TDY | Silicon N-Channel Power MOSFET |
| CS4N60A8HD | Silicon N-Channel Power MOSFET |
| CS4N60ARRD | Silicon N-Channel Power MOSFET |
| CS4N60FA9R | Silicon N-Channel Power MOSFET |
| CS4N60FA9TDY | Silicon N-Channel Power MOSFET |
