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3DD13003F3D - Silicon NPN Transistor (Huajing Microelectronics)
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3DD13003F - NPN Transistor (JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 3DD13003F TRANSISTOR ( NPN ) TO-220F FEATURE Power Swit.

3DD13003F1D - Silicon NPN Transistor (Huajing Microelectronics)
NPN 3DD13003 F1D ○R 3DD13003 F1D NPN ， ， ， ， 、。 ● ● ● ● ● ● ● ● -10℃～40℃ 1 265℃ ＜85％ VCEO IC Ptot （Ta=25℃） 400 1.5 0.

3DD13003F6 - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR (JILIN SINO)
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13003F6 MAIN CHARACTERISTICS IC 2.0A VCEO 400V PC(TO-126(S)) 20W Package z z z.

3DD13003F6D - Silicon NPN Transistor (Huajing Microelectronics)
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3DD13003 - High Voltage Fast Switching NPN Power Transistor (GME)
Production specification High Voltage Fast Switching NPN Power Transistor 3DD13003 FEATURES  PC=1W(Mounted on ceramic substrate).  High speed swit.

3DD13003A - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR (JILIN SINO-MICROELECTRONICS)
R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD13003A IC VCEO PC(TO-92) PC(TO-126/ TO-126F) PC(TO-220) MAIN CHARACTERISTICS 1.5A 450V .

3DD13003A1D - Silicon NPN bipolar transistor (Huajing Microelectronics)
NPN 3DD13003 A1D ○R 3DD13003 A1D NPN ， ， ， 、。 ● ● ● ● ● ● ● ● -10℃～40℃ 1 265℃ ＜85％ VCEO IC Ptot （Ta=25℃） 450 1.8 0.8.

3DD13003B - NPN Plastic-Encapsulate Transistor (Weitron)
WEITRON NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free 3DD13003B FEATURES : • power switching applications 1. EMITTER 2. COLLECTOR 3. BASE T.

3DD13003D - Silicon NPN bipolar transistor low-frequency amplification (Huajing Microelectronics)
NPN ○R 3DD13003D 1 ： 3DD13003D NPN ，， ，， VCEO 、。 ：TO-126F ， RoHS 。 IC Ptot （TC=25℃） 400 2.5 50 V A W 2 ： TO-126F ● ● ● ● ● 1 2 .