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Huajing Microelectronics

3DD5011AH Datasheet Preview

3DD5011AH Datasheet

Silicon NPN Bipolar Transistor

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Huajing Discrete Devices
R
Silicon NPN Bipolar Transistor for Low-frequency
Amplification
3DD5011AH
1 Description
3DD5011AH, silicon NPN low frequency power
transistor, is used to colour TV switching regulator.
PackageTO-3P(H)IS.
2 Characteristics
Low switching power dissipation
Low reversing leaking current
Good high-temperature characteristic
Good current characteristic
High reliability
3 Application
The device is mainly used in 14 and
21 inch colour TV switching regulator.
Typical Data
VCEO
IC
PtotTC=25℃)
600
10
55
V
A
W
12
3
1. B 2. C
3. E
Equivalent circuit
C
B
E
The name and content of poisonous and harmful material in products
Part’s Name
hazardous substance
CONTENT
Pb
0.1%
Hg
0.1%
Cd
0.01%
Cr(VI)
0.1%
PBB
0.1%
PBDE
0.1%
Lead Frame ○ ○ ○ ○ ○ ○
Molding Compound
Chip ○ ○ ○ ○ ○ ○
Wire Bonding ○ ○ ○ ○ ○ ○
Solder
× ○○ ○ ○○
○:means the hazardous material is under the criterion of SJ/T11363-2006.
×:means the hazardous material exceeds the criterion of SJ/T11363-2006.
Note
The plumbum element of solder exist in products presently, but within the
allowed range of Eurogroup’s ROHS.
WUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 / 5 2008




Huajing Microelectronics

3DD5011AH Datasheet Preview

3DD5011AH Datasheet

Silicon NPN Bipolar Transistor

No Preview Available !

Huajing Discrete Devices
4 Electrical Characteristics
Maximum Ratings
Except for Other PrescriptionTa= 25
Parameter Note
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Current
Power Dissipation
Ta=25
Tc=25
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
R 3DD5011AH
Rating
900
600
9
10
2
55
150
-55150
Unit
V
V
V
A
W
Electrical characteristics
Except for Other PrescriptionTa= 25
Parameter Note
Collector-Base Cutoff Current
Collector- Emitter Cutoff Current
Emitter-Base Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Ratio Between hFE1of Low Current
and hFE2 of High Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Storage Time
Fall Time
Transition Frequency
a: Impulse tp300μs,δ≤2%
Symb
ol
ICBO
ICEO
IEBO
VCBO
VCEO
VEBO
hFEa
hFE1
hFE2
VCE
a
sat
VBE
a
sat
ts
tf
fT
Test Conditions
VCB=800V, IE=0
VCE=600V, IB=0
VEB=9V, IC=0
ICB=1mA, IE=0
ICE=5mA,IB=0
IEB=1mA, IC=0
VCE=5V, IC=1A
hFE1VCE=5V, IC=5A
hFE2VCE=5V, IC=1mA
IC=4A, IB=0.8A
IC=4A, IB=0.8A
UI9600IC=0.5A
VCE=10V, IC=0.1A
f=0.3MHz
Criterion
Min Typ Max
10
100
10
900
600
9
15 30
6
10
0.25 1
0.88 1.5
7.5 10
0.6 1
4 12
Unit
μA
μA
μA
V
V
V
V
V
μs
μs
MHz
WUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 2 / 5 2008


Part Number 3DD5011AH
Description Silicon NPN Bipolar Transistor
Maker Huajing Microelectronics
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3DD5011AH Datasheet PDF






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