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BT25T120ANF - Silicon FS Planar IGBT

General Description

Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 1200V Trench FS-IGBT offers superior conduction and switching performances, high avalanche ruggedness.

Key Features

  • l Trench FS Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 1.9V @ IC = 25A and TC = 25°C l Extremely enhanced avalanche capability.

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Datasheet Details

Part number BT25T120ANF
Manufacturer Huajing Microelectronics
File Size 172.53 KB
Description Silicon FS Planar IGBT
Datasheet download datasheet BT25T120ANF Datasheet

Full PDF Text Transcription for BT25T120ANF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BT25T120ANF. For precise diagrams, and layout, please refer to the original PDF.

Silicon FS Planar IGBT BT25T120ANF ○R General Description： Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 1200V Trench FS-IGBT offe...

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and advanced FS(field stop) technology, the 1200V Trench FS-IGBT offers superior conduction and switching performances, high avalanche ruggedness. VCES IC Ptot （TC=25℃） VCE(SAT) 1200 25 312 1.9 V A W V Features： l Trench FS Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 1.9V @ IC = 25A and TC = 25°C l Extremely enhanced avalanche capability Applications： Power switch circuit of induction cooker(IH).

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